Regensburg 2013 – scientific programme
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DF: Fachverband Dielektrische Festkörper
DF 21: Resistive Switching (jointly with DF, KR, HL)
DF 21.4: Talk
Friday, March 15, 2013, 10:15–10:30, H32
Resistive Switching in thermally oxidized Titanium — •Daniel Blaschke1, Ilona Skorupa1, Bernd Scheumann1, Andrea Scholz1, Peter Zahn1, Sibylle Gemming1, Kay Potzger1, Agnieszka Bogusz2, and Heidemarie Schmidt2 — 1Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, P.O. Box 510119, 01314 Dresden - Germany — 2Dept. Electr. Eng. & Inf. Techn., TU Chemnitz, 09107 Chemnitz
In recent years the resistive switching of binary transition metal oxides like NiO, Nb2O5 and TiO2 has attracted considerable attention for application in nonvolatile memory storage systems.
For our investigations we used a thin rutile TiO2 film, which was prepared by the thermal oxidation of a 100nm thick e-beam evaporated Ti film. The oxidation temperatures were varied from 500°C to 800°C at an oxygen partial pressure of 1 atmosphere. We will present the dependence of the crystal structure and the switching behavior on the oxidation temperature as well as an interesting feature on the time-dependent evolution of the resistance during the Reset process.
The project is funded by the Initiative and Networking Fund of the Helmholtz Association (VH-VI-422).