Regensburg 2013 – scientific programme
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DF: Fachverband Dielektrische Festkörper
DF 21: Resistive Switching (jointly with DF, KR, HL)
DF 21.8: Talk
Friday, March 15, 2013, 11:30–11:45, H32
Multilevel resistive switching in Ar+ irradiated BiFeO3 thin films — •Yao Shuai1, Xin Ou2, Wenbo Luo2, Nan Du3, Danilo Bürger2,3, Oliver G. Schmidt3,4, and Heidemarie Schmidt3 — 1State Key Laboratory of Electronic Thin Films and Integrated Devices, UESTC, China — 2Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research, Germany — 3University of Technology Chemnitz, Faculty of Electrical Engineering and Information Technology, 09107 Chemnitz, Germany — 4Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstraße 20, 01069 Dresden, Germany
Low energy Ar+ ion irradiation has been applied to an Au/BiFeO3/Pt capacitor structures before deposition of the Au top electrode. The irradiated thin films exhibit multilevel resistive switching without detrimental resistance degradation, which makes the intermediate resistance states more distinguishable as compared to the non-irradiated thin film [1]. The stabilization of resistance states after irradiation is discussed based on the analysis of conduction mechanism during the resistive switching in BiFeO3 with a rectifying Au top electrode and a nonrectifying Pt bottom electrode [2]. Furthermore, it is shown how the conduction mechanisms change from room temperature to 423 K. [1] Y. Shuai, X. Ou et al., IEEE Device Letters, 2012, in press. [2] Y. Shuai, S. Zhou, D. Bürger, M. Helm, H. Schmidt, J. Appl. Phys. 109 (2011), 124117-4.