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Regensburg 2013 – scientific programme

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DF: Fachverband Dielektrische Festkörper

DF 21: Resistive Switching (jointly with DF, KR, HL)

Friday, March 15, 2013, 09:30–12:45, H32

09:30 DF 21.1 Ab initio study of defects in SrTiO3 bulk and (100) surfaces — •Ali Al-Zubi, Gustav Bihlmayer, and Stefan Blügel
09:45 DF 21.2 Resistive switching properties in ion beam modified SrTiO3 — •Jura Rensberg, Benjamin Roessler, Christian Katzer, Frank Schmidl, and Carsten Ronning
10:00 DF 21.3 Cation defect engineering in SrTiO3 thin films by PLD with Verification and implication on memristive propertiesSebastian Wicklein, •Chencheng Xu, Alessia Sambri, Salvatore Amoruso, David Keeble, Annemarie Köhl, Werner Egger, and Regina Dittmann
10:15 DF 21.4 Resistive Switching in thermally oxidized Titanium — •Daniel Blaschke, Ilona Skorupa, Bernd Scheumann, Andrea Scholz, Peter Zahn, Sibylle Gemming, Kay Potzger, Agnieszka Bogusz, and Heidemarie Schmidt
10:30 DF 21.5 Non-volatile resistive switching in multiferroic YMnO3 thin films — •Agnieszka Bogusz, Ilona Skorupa, Andrea Scholz, Oliver G. Schmidt, and Heidemarie Schmidt
10:45 DF 21.6 Practical guide for validated memristance measurements — •Nan Du, Yao Shuai, Wenbo Luo, Christian Mayr, Rene Schüffny, Oliver G. Schmidt, and Heidemarie Schmidt
  11:00 Coffee break (15 min)
11:15 DF 21.7 Creating an Oxygen Gradient in Nb2O5 by Argon Irradiation for Resistive Switching Memory — •Helge Wylezich, Hannes Mähne, Daniel Blaschke, Stefan Slesazeck, and Thomas Mikoljiack
11:30 DF 21.8 Multilevel resistive switching in Ar+ irradiated BiFeO3 thin films — •Yao Shuai, Xin Ou, Wenbo Luo, Nan Du, Danilo Bürger, Oliver G. Schmidt, and Heidemarie Schmidt
11:45 DF 21.9 Influence of thickness ratio on resistive switching in BiFeO3:Ti/BiFeO3 bilayer structures — •Tiangui You, Wenbo Luo, Yao Shuai, Nan Du, Danilo Bürger, Ilona Skorupa, Oliver G. Schmidt, and Heidemarie Schmidt
12:00 DF 21.10 Nanoscale resistive switching in epitaxial and polycrystalline BiFeO3 thin films — •Yao Shuai, Wenbo Luo, Chuangui Wu, Wanli Zhang, Oliver G. Schmidt, and Heidemarie Schmidt
12:15 DF 21.11 An electronic implementation of amoeba anticipation — •Mirko Hansen, Karlheinz Ochs, Martin Ziegler, and Hermann Kohlstedt
12:30 DF 21.12 Lattice dynamics in Sb- and Te-based phase-change materials — •Ronnie Ernst Simon, Ilya Sergueev, and Raphaël Pierre Hermann
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