Regensburg 2013 – scientific programme
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DF: Fachverband Dielektrische Festkörper
DF 22: Poster II
DF 22.19: Poster
Friday, March 15, 2013, 10:30–13:30, Poster D
Post-annealing effects in the Heusler compound Co2MnSi revealed by magnetoresistance and anomalous Hall effect measurements — •Inga-Mareen Imort, Patrick Thomas, Savio Fabretti, and Andy Thomas — Thin Films and Physics of Nanostructures, Bielefeld University, Germany
Co-based Heusler compounds are prominent candidates for spintronic application due to the predicted half-metallic behavior, i.e. 100% spin polarization at the Fermi level, and the required high Curie temperatures. The degree of structural disorder can affect the spin polarization, and therefore, the electrical and magnetic transport properties. Local disorder as well as crystallographic quality of thin films can be influenced by post-annealing. The Co2MnSi layers were deposited using dc/rf-magnetron sputtering on single-crystal MgO (001) substrates, and ex-situ annealed at temperatures in the range from 350∘C to 500∘C. The structural quality of our samples, especially the crossover from amorphous to crystalline structure, was tested by X-ray diffraction scans. After etching typical Hall bar structures, we measured the temperature and field dependent evolution of the anomalous Hall resistance ρAHE and the longitudinal resistance ρxx with the sample annealing temperature, in order to investigate the influence of defects, i.e. dislocations and grain boundaries, and atomic disorder on the magnetoresistance and the anomalous Hall effect in Co2MnSi. This work has been supported by the NRW MIFW.