Regensburg 2013 – scientific programme
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DF: Fachverband Dielektrische Festkörper
DF 22: Poster II
DF 22.67: Poster
Friday, March 15, 2013, 10:30–13:30, Poster D
Exploring spin-filter tunneling in magnetic oxide hybrids — •Bernardus Zijlstra1, Christian Caspers1, Sebastian Flade1, Michael Voigt1, Jürgen Schubert2, Claus M. Schneider1, and Martina Müller1 — 1Peter-Grünberg-Institut (PGI-6), Forschungszentrum Jülich — 2Peter-Grünberg-Institut (PGI-9), Forschungszentrum Jülich
A key requirement for the development of spintronic devices is the ability to electrically generate highly spin-polarized currents. Magnetic oxides that posses a spin-filter functionality are an interesting route for achieving this. In order to study the spin-filter tunneling mechanism, EuO was utilized as a representative of this magnetic oxide class.
With regard to studying the influence of band structure on the spin-filtering effect, a model-system was realized. Single-crystalline, ultrathin layers of EuO(100) were grown on lattice-matched Sn-doped In2O3(100) and characterized by RHEED, XRD and TEM. Moreover, the electrical behavior in this system was studied by spin-filter tunneling experiments.
Furthermore, single-crystalline EuO(100) was epitaxially grown on Si(100) with the final aim of studying spin injection through a magnetic tunnel barrier into a semiconductor. Contrary to earlier predictions of thermodynamic stability of EuO on silicon, formation of an intermediate silicide-layer was observed. To overcome this problem, the silicon surface was passivated by an ultrathin SiOx layer and magnetotransport experiments were performed on such EuO/SiOx/Si heterostructures.