Regensburg 2013 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

DF: Fachverband Dielektrische Festkörper

DF 22: Poster II

DF 22.6: Poster

Friday, March 15, 2013, 10:30–13:30, Poster D

Effects of mechanical stress to GMR/TMR elements — •Stefan Niehörster, Andy Thomas, and Günter Reiss — Universität Bielefeld, Germany

By applying a mechanical stress to thin film giant magnetoresistance (GMR) and tunnel magnetoresistance (TMR) elements, it is possible to influence their resistive behavior because of the inverse magnetostriction. Dependent on the direction between the applied mechanical stress and the magnetic field, it is possible to increase/decrease the GMR/TMR ratio and to influence the shape of their hysteresis. With the applied stress perpendicular to the magnetic field, the TMR ratio decreased from 192% to 151%. A parallel stress increased the TMR ratio from 193% to 208%. In this case, the applied stress was just limited by the mechanical breakdown of the wafer. Otherwise, the changes in the ratios and the shape of the hysteresis were reversible.