Regensburg 2013 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 11: Poster Session I: Application of thin films; Ion beam induced surface patterns; Ion and electron beam induced processes; Micro- and nanopatterning (jointly with O)

DS 11.20: Poster

Montag, 11. März 2013, 17:00–20:00, Poster B1

Nanolithography using Electron Field Emission from Nano-tips — •Steve Lenk, Marcus Kästner, Tzvetan Ivanow, and Ivo Rangelow — Institut für Mikro- und Nanoelektronik, Technische Universität Ilmenau, Germany

The emission of low-energetic electrons from a scanning probe nanotip is a promising method to produce nanometer-scale semiconductor devices [1]. We study the electron emission from metallic and semiconducting nanotips with regards to the application in nanolithography experimentally and theoretically. The operation regime for the electron lithography, i.e. applied voltages up to 50V and operation at room temperature, is between field and thermionic emission. In addition to the calculation of the field emission current, we are solving Laplace's equation for the electric field distribution around the nanotip and the trajectories of the emitted electrons. To achieve an additional focusing of the electron beam, we include a volcano-type gate [2]. In nanolithography applications semiconductor tips are often used and, therefore, we consider the effects of field-induced changes of band bending, surface charges as well as the effect of screened image charges and emission from surface states together with a volcano gate. The theoretical results were compared with Fowler-Nordheim measurements. These measurements and calculations are the basis for study the interactions of the emitted electrons with the resist material and, thus, to the mechanisms of nanolithography.

[1] M. Kaestner and I. Rangelow, Microelectron. Eng. 97 (2012) 96

[2] T. Ivanov, J. Vac. Sci. Technol. B 19 (2001) 2789