Regensburg 2013 – scientific programme

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DS: Fachverband Dünne Schichten

DS 11: Poster Session I: Application of thin films; Ion beam induced surface patterns; Ion and electron beam induced processes; Micro- and nanopatterning (jointly with O)

DS 11.9: Poster

Monday, March 11, 2013, 17:00–20:00, Poster B1

Ion beam patterning of Si(001): from the amorphous to the crystalline regime — •Martin Engler, Moritz Will, and Thomas Michely — II. Physikalisches Institut, Universität zu Köln

It is well known that under room temperature irradiation Si ion beam amorphizes, while it remains crystalline during ion exposure at about 500 ^∘C and above. In the present work we tune temperature through the amorphous-crystalline phase transition and investigate the effect of this transition on ion beam induced pattern formation. Scanning tunnelling microscopy and low energy electron diffraction are used to investigate the Si(001) morphology after 2 keV Kr⁺ ion irradiation. With increasing temperature a sharp transition from a flat amorphous surface to crystalline mound and crater morphology is observed. The crystalline pattern displays a step and terrace structure with Si-dimer rows. The amplitude of the evolving crystalline pattern is highest right at the phase transition and decreases with increasing temperature within the crystalline regime. The opposite is true for the the lateral length scale of the pattern.