Regensburg 2013 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 12: Poster Session II: Functionalized semiconductor nanowires (jointly with HL); Resistive switching (jointly with DF, KR, HL); Thermoelectric materials

DS 12.10: Poster

Montag, 11. März 2013, 17:00–20:00, Poster B1

Thermal conductivity measurements using the Raman shift method — •Simon Filser, Benedikt Stoib, Martin Stutzmann, and Martin S. Brandt — Walter Schottky Institut, Technische Universität München, Am Coulombwall 4, 85748 Garching

With the aim to determine the in-plane thermal conductivity of laser-sintered thin films of SiGe nanoparticles [1], we study the applicability of a contactless optical method employing the temperature-dependent frequency shift of the LO phonon mode, as observed by Raman spectroscopy, as a measure for the local temperature. We present our results on a variety of model systems such as, e.g., bulk Si, free-standing Si films and rectangular cantilevers validating the method. The pressure-dependent influence of parasitic thermal conduction through the ambient atmosphere is studied, indicating a small effect for single crystalline material, but a significant contribution for the macro-porous laser-sintered system studied here. Free-standing samples of laser-sintered Si nanoparticle thin films were fabricated either by scanning electron microscope-based micro-manipulation or via a liquid-transfer technique. The results of Raman mapping of such membranes are consistent with the sample morphology and provide insight into the thermal transport.

[1] B. Stoib et al., Appl. Phys. Lett., 100, 231907 (2012)