Regensburg 2013 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 12: Poster Session II: Functionalized semiconductor nanowires (jointly with HL); Resistive switching (jointly with DF, KR, HL); Thermoelectric materials
DS 12.12: Poster
Montag, 11. März 2013, 17:00–20:00, Poster B1
Phonon Transport in Si-Isotope-Multilayer — •Michael Bachmann, Michael Czerner, Robert Henrich, and Christian Heiliger — I. Physikalisches Institut, Justus Liebig University Giessen, D-35392, Germany
In thermoelectrics the maximum achievable efficiency is linked to the material parameters by the so called figure of merit. There are in principle four different material parameters, which can be divided into three electronic parameters and one phononic parameter. The three electronic parameters are the electric conductivity, the Seebeck coefficient, and the thermal conductivity of the electrons. The phononic parameter is the thermal conductivity of the lattice. In silicon the electronic parameters are suitable for thermoelectric applications, but the high lattice thermal conductivity prevents the application of pure silicon in thermoelectric devices. Si-isotope-multilayers are a promising structure, where the lattice thermal conductivity can be decreased and the electronic parameters remain unaffected. We present phonon transport calculations based on an atomistic Greens function method for 28Si/29Si and 28Si/30Si isotope-multilayers. These results show that a periodic arrangement of the layer-system cannot decrease the phonon thermal conductivity substantially, whereas a random arrangement of the layer-system can lead to a strong decrease in the phonon conductivity.