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DS: Fachverband Dünne Schichten
DS 12: Poster Session II: Functionalized semiconductor nanowires (jointly with HL); Resistive switching (jointly with DF, KR, HL); Thermoelectric materials
DS 12.14: Poster
Montag, 11. März 2013, 17:00–20:00, Poster B1
Thermoelectric characterization of Sn1(V)2(VI)4 substitutional systems — •Stefan Jakobs1, Felix Rolf Lutz Lange1, Karl Simon Siegert1, Peter Jost1, and Matthias Wuttig1,2 — 1I. Physikalisches Institut (IA), RWTH Aachen University, 52056 Aachen, Germany — 2JARA - Fundamentals of Future Information Technology, RWTH Aachen University, Germany
The environmental impact of global warming and the steady rise of the world-wide energy demand requires an increased efficiency of energy consumptive applications.
Thermoelectric generators may contribute to increased efficiency since they are able to convert waste heat into electrical energy. The conversion efficiency of thermoelectric materials is characterized by the dimensionless figure of merit zT = α 2 σ/κT. Hence, to gain large zT values, it is mandatory to have a high electrical conductivty σ, a large Seebeck coefficient α and a low thermal conductivity κ. Since charge carriers also contribute to thermal transport, low lattice thermal conductivities are crucial for a high thermoelectric performance.
Thin film (IV)1(V)2(VI)4 chalcogenides allow access to a metastable rocksalt phase. While one sublattice consists of Te, the cation site is randomly occupied by Sn, Sb and 25 % of vacancies. This unconventionally high degree of disorder in combination with the large amount of vacancies is favourable for low lattice thermal conductivities [1].
Here, we present the thermoelectric properties of Sn1Sb2Te4 and Sn1Bi2Te4 thin films prepared under different annealing conditions.
[1] E. R. Sittner et al., Phys Status Solidi A, DOI 10.1002/pssa.201228397