Regensburg 2013 – scientific programme

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DS: Fachverband Dünne Schichten

DS 12: Poster Session II: Functionalized semiconductor nanowires (jointly with HL); Resistive switching (jointly with DF, KR, HL); Thermoelectric materials

DS 12.23: Poster

Monday, March 11, 2013, 17:00–20:00, Poster B1

The effect of interfaces on the thermoelectric properties of laterally microstructured ZnO-based thin-films — •David Hartung, Florian Gather, Achim Kronenberger, Martin Eickhoff, Bruno K. Meyer, and Peter J. Klar — I. Physikalisches Institut, Justus-Liebig-University, Heinrich-Buff-Ring 16, 35392 Giessen

A series of samples was laterally microstructured with a self-aligned pattern transfer method consisting of alternating stripes of ZnO grown by molecular-beam epitaxy and radio-frequency sputtered Ga-doped ZnO stripes. The MBE-grown ZnO thin film samples were laterally microstructured by photolithography followed by ion-beam etching in order to obtain different lateral arrangements of stripes of defined interface geometry. In a second step the free regions between the stripes of MBE-grown ZnO were sputtered with Ga-doped ZnO. A lift-off step completes the micro-fabrication of a planar alternating ZnO/ZnO:Ga bar structure on each sample.
Throughout the series the bar width and hence the number of interfaces was kept constant, but the interface profile was varied yielding different interface lengths and geometries.
We measured in-plane as a function of temperature the Seebeck coeffificient S and the electrical conductivity σ of the samples with the transport direction perpendicular to the stripe direction.
The measured data were compared to simulated data using an empirical network model.