Regensburg 2013 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
DS: Fachverband Dünne Schichten
DS 12: Poster Session II: Functionalized semiconductor nanowires (jointly with HL); Resistive switching (jointly with DF, KR, HL); Thermoelectric materials
DS 12.24: Poster
Monday, March 11, 2013, 17:00–20:00, Poster B1
Thermoelectric properties of ZnO1−xSx thin films — •Florian Gather, Achim Kronenberger, Peter J. Klar, and Bruno K. Meyer — I. Physikalisches Institut, Justus-Liebig-University, Heinrich-Buff-Ring 16, 35392 Giessen
We investigated the thermoelectric properties of rf-sputtered ZnO1−xSx thin films on sapphire substrates. Due to its good availability and its non-toxicity, ZnO1−xSx is a promising candidate for thermoelectric applications. The electric conductivity σ, the Seebeck coefficient S and carrier concentrations of a series of hydrogen doped samples and aluminum doped samples respectively were determined in in-plane direction over a wide temperature range. For the investigation of the influence of the sulphur concentration x on the thermal conductivity κ we employed the 3-omega method on a series of undoped thin-films. The measurements reveal a reduced κ in cross-plane direction of the samples containing sulphur compared to zinc-oxide samples. Using Raman spectroscopy we found indications for local phonon modes of oxygen in zinc-sulfide and of sulphur in zinc-oxide, respectively. These local phonon modes cause the reduction of κ observed in the experiments. Both sample series are compared in terms of crystal quality and grain size using XRD-analysis and atomic force microscopy.