Regensburg 2013 – scientific programme

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DS: Fachverband Dünne Schichten

DS 12: Poster Session II: Functionalized semiconductor nanowires (jointly with HL); Resistive switching (jointly with DF, KR, HL); Thermoelectric materials

DS 12.6: Poster

Monday, March 11, 2013, 17:00–20:00, Poster B1

Structural and resistive switching properties of SrTiO₃ deposited by RF sputtering — •Benjamin Roessler, Jura Rensberg, Frank Schmidl, and Carsten Ronning — Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany

Strontium titanate (SrTiO₃) exhibits bipolar resistive switching between a high- and a low-resistance state when applying an appropriate electric field. The possibility to deposit SrTiO₃ at room temperature by magnetron sputtering on silicon substrates without buffer layers makes it one of the promising candidates for future nonvolatile data memory application. Therefore, we deposited polycrystalline SrTiO₃ on p-Si(100) as well as p-Si(110) at room temperature with a fixed oxygen-to argon content ratio of 1:2. The microstructure as well as the crystalline quality of the films was analyzed using cross-sectional electron microscopy and X-ray diffraction analysis. For both substrates a broad grain size distribution was found for the as-deposited films. To improve the crystalline quality post-deposition annealing was performed up to temperatures of 1000^∘C. In this contribution we discuss the structural changes and electrical properties of SrTiO₃, i.e. the resistive switching properties as a function of the annealing temperature.