Regensburg 2013 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 12: Poster Session II: Functionalized semiconductor nanowires (jointly with HL); Resistive switching (jointly with DF, KR, HL); Thermoelectric materials
DS 12.7: Poster
Montag, 11. März 2013, 17:00–20:00, Poster B1
Memory Effects in Resistive Ion-beam Modified Oxides — •S. Gemming1,2, D. Blaschke1,2, K. Potzger1, P. Zahn1, A. Bogusz2, H. Schmidt2, T. Mikolajick3, S. Slesazeck3, H. Wylezich3, B. Abendroth4, D. C. Meyer4, S. Rentrop4, R. Dittmann5, K. Skaja5, R. Waser5, J. Rensberg6, C. Ronning6, N. A. Spaldin7, and D. Basov8 — 1HZ Dresden-Rossendorf, D-01314 Dresden — 2TU Chemnitz, D-09107 Chemnitz — 3TU Dresden, D-01062 Dresden — 4TU Bergakademie Freiberg, D-09596 Freiberg — 5FZ Jülich, D-52425 Jülich — 6Friedrich Schiller University Jena, D-07743 Jena — 7ETH Zürich, CH-8092 Zürich, Switzerland — 8U.C. San Diego, La Jolla CA 92093-0354, U.S.A.
The Virtual Institute ’Memriox’ establishes a joint research initiative in the field of ion-tailored oxide-based memristive elements, to be pursued within a novel and unique combination of core competences from the Helmholtz centers Dresden-Rossendorf and Jülich and their university partners in Dresden, Freiberg, Jena, San Diego, and Zürich. A nanoscale memristive element may prove the concept of the ultimate future non-volatile memory cell with a resistance set directly by electric currents. The Virtual Institute aims at stepping beyond the established layer-by-layer control of intrinsic defects during the synthesis of memristive homojunctions. The project is financed by the Initiative and Networking Funds of the Helmholtz Association (VH-VI-442).