Regensburg 2013 – scientific programme

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DS: Fachverband Dünne Schichten

DS 13: Poster Session III: Layer properties: electrical, optical and mechanical properties; Thin film characterization: structure analysis and composition (XRD, TEM; XPS, SIMS, RBS..)

DS 13.10: Poster

Monday, March 11, 2013, 17:00–20:00, Poster B1

Semiconducting thin films processed at low temperatures from unstabilized ZnO nanoparticle solutions — •Paul Mundt¹, Nicole Anderl², and Heinz von Seggern¹ — ¹Electronic Materials Division, Institute of Materials Science, Technische Universität Darmstadt, Petersenstr. 23, 64287 Darmstadt, Germany — ²Ernst-Berl-Institut für Technische und Makromolekulare Chemie, Technische Universität Darmstadt, Petersenstrasse 22, D-64287 Darmstadt, Germany

Recently, zinc oxide nanoparticles (ZnO-NP) have become a subject of considerable interest due to their properties showing a high potential for developing solution processed, low cost, low temperature semiconducting devices. Most of the work so far uses sterically stabilized ZnO-NP dispersions. However, the stabilizing agents can have a negative impact on the electronic properties of the resulting semiconducting thin film. They act as additional barriers for the charge carriers. Removing these stabilizers from the film usually requires high temperature treatments being not compatible with flexible polymeric substrates. The present work utilizes sol gel processed ZnO-NPs without an additional steric stablization. Thin ZnO-NP films are produced by spin coating and characterized by various techniques to obtain information about the crystallographic structure, the band energies and the topography. Additionally, thin film transistors with a ZnO-NP active layer processed at temperatures of 150^∘C only and therefore suitable for applications on flexible substrates are realized yielding electron mobilities of 10⁻³cm²/Vs.