Regensburg 2013 – scientific programme
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DS: Fachverband Dünne Schichten
DS 13: Poster Session III: Layer properties: electrical, optical and mechanical properties; Thin film characterization: structure analysis and composition (XRD, TEM; XPS, SIMS, RBS..)
DS 13.13: Poster
Monday, March 11, 2013, 17:00–20:00, Poster B1
Temperature and time dependent in-situ crystallization of strontium titanate thin films — •Florian Hanzig1, Carsten Richter1,2, Juliane Hanzig1, Erik Mehner1, Hartmut Stöcker1, Barbara Abendroth1, and Dirk C. Meyer1 — 1TU Bergakademie Freiberg, Institut für Experimentelle Physik — 2HASYLAB bei DESY, Hamburg
Strontium titanate is a well-known transition metal oxide crystallizing in the perovskite type of structure. With its large band-gap and its mixed ionic and electronic conductivity, SrTiO3 is a promising isolating material in metal-insulator-metal (MIM) structures for resistive switching memories. In this paper, the crystallization of amorphous strontium titanate thin films is investigated by in-situ grazing incidence x-ray diffraction using synchrotron light (Beamline E2 at DORIS III - HASYLAB / DESY, Hamburg). We focus on the crystallization mechanisms in dependence of the layer stoichiometry and heating rates. Different physical vapour deposition methods have been used to fabricate stoichiometric and Sr-rich layers. The crystallization and evolution of phase composition, crystallite size and strain of the SrTiO3 layers were investigated for temperatures up to 950 ∘C under atmospheric conditions. At approximately 350 ∘C crystallization of the perovskite-type SrTiO3 is initiated for Sr-rich electron beam evaporated layers, whereas stoichiometric sputter deposited thin films crystallize from about 500 ∘C. During annealing a diffusion of Si from the substrate into the SrTiO3 layer occur leading to the formation of secondary silicate phases which are detected by XPS.