Regensburg 2013 – scientific programme

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DS: Fachverband Dünne Schichten

DS 13: Poster Session III: Layer properties: electrical, optical and mechanical properties; Thin film characterization: structure analysis and composition (XRD, TEM; XPS, SIMS, RBS..)

DS 13.17: Poster

Monday, March 11, 2013, 17:00–20:00, Poster B1

Quantitative investigation of laser-deposited Ge2Sb2Te5 by abberation corrected STEM/EELS — •Ulrich Roß, Andriy Lotnyk, Erik Thelander, and Bernd Rauschenbach — Leibniz-Institut für Oberflächenmodifizierung e.V. Permoserstr. 15 D-04318 Leipzig

We have investigated amorphous as well as crystalline Ge2Sb2Te5 thin films grown by pulsed laser deposition onto various substrates, utilizing the capabilities of an analytical TEM (Titan 80-300kV Cs probe corrected) in conjuncture with a post-column EELS spectrometer. The material system Ge2S2bTe5 (GST) is of special interest as a test-case for phase-change behaviour materials. As such, we have investigated both as-deposited as well as recrystallized thin-film samples in regards to local composition, local crystallinity and crystal structure. In addition, we aim to make use of the excellent spacial and energy resolution of the Cs-corrected STEM-EELS in order to correlate local composition with changes in the conduction behaviour characteristic for phase-change materials. Preliminary results will be presented, illustrating quantitative high-resolution STEM as a promising approach to futher understanding of the physical phenomena behind phase-change behaviour.