Regensburg 2013 – scientific programme

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DS: Fachverband Dünne Schichten

DS 13: Poster Session III: Layer properties: electrical, optical and mechanical properties; Thin film characterization: structure analysis and composition (XRD, TEM; XPS, SIMS, RBS..)

DS 13.2: Poster

Monday, March 11, 2013, 17:00–20:00, Poster B1

Doped TiO₂ as alternative transparent conducting oxide — •Daniel Dorow-Gerspach, Philipp Schulte, Patrick Ries, and Matthias Wuttig — I. Physikalisches Institut (IA) RWTH-Aachen University

In many highly demanded modern devices, such as displays and solar cells, materials are needed, that are transparent and at the same time highly conductive. Commonly such materials are called transparent conducing oxides (TCO), with the well-known and efficient but also expensive representative In₂O₃:Sn. A promising cheaper alternative is Niobium doped Titania (TiO₂:Nb), with the matrix material TiO₂ that is already used for anti-reflective coatings or self-cleaning surfaces. For the commercial utilization, there are two challenges. One is the relatively high temperature for the annealing of amorphously deposited TiO₂. The other challenge is that the most conducting films were achieved by RF-sputtering, which is not suitable for large scale production processes. In this work we have used TiO₂ seed layers to reduce the required annealing temperature by 50 K. To address the second point and obtain higher deposition rates, we have employed a reactive DC-sputtering process using a metallic Ti:Nb target. These approaches led to the fabrication of conducting films with a reduced crystallization temperature yet good electronic properties.