Regensburg 2013 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 13: Poster Session III: Layer properties: electrical, optical and mechanical properties; Thin film characterization: structure analysis and composition (XRD, TEM; XPS, SIMS, RBS..)

DS 13.4: Poster

Montag, 11. März 2013, 17:00–20:00, Poster B1

Influence of doping on the metal-semiconductor transition of VO₂ thin films — •Marc K. Dietrich, Angelika Polity, Benedikt Kramm, and Bruno K. Meyer — Justus-Liebig-Universität Gießen, I. Physikalisches Institut, Heinrich-Buff-Ring 16, 35392 Gießen, Germany

The optical and structural properties close to the metal-semiconductor transition of doped vanadium dioxide (VO₂) films have been investigated. Doped VO₂ thin films were deposited by rf sputtering technique on TiO₂ coated glass substrates. Single crystal VO₂ undergoes a phase transition near 68^∘C, while doping (e.g. fluorine and tungsten) decreases the transition temperature. Therefore, VO₂ has potential for many applications involving thermally activated optical or electronic switching devices. For an application as window coating which switches the transmission dependent on the ambient temperature the determination of luminous transmittance and the g-value are of substantial importance. We determined these properties for the switching in the range of the ambient temperatures.