Regensburg 2013 – scientific programme

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DS: Fachverband Dünne Schichten

DS 14: Focus Session: Functionalized Semiconductor Nanowires I (jointly with HL)

DS 14.1: Invited Talk

Tuesday, March 12, 2013, 09:30–10:00, H8

Nanowire photovoltaics with absorption beyond the ray optics limit. — •Magnus T Borgström — Solid state physics, Lund University, Lund, Sweden

Semiconducting nanowires have been recognized as promising materials for high-performance electronics and optics where optical and electrical properties can be tuned individually. The feasibility of III-V nanowire integration with existing silicon processing technology due to the small footprint between the silicon substrate and the nanowire material has further sparked that interest. For NWs to provide the new architecture for next generation photovoltaics there is a strong need to take complete control over synthesis. By optimizing growth conditions with respect to tapering we created nanowire-InP nanowire based solar cells using Au seed particles for growth. The nanowires were processed as-grown with a transparent top contact to create 1x1 square mm devices, with about 4 million nanowires contacted on each device. The solar cells were investigated under 1 sun (AM 1.5) illumination, and the devices show efficiencies higher than 10% and conversion of the solar irradiation into photocurrent beyond the ray optics limit.