Regensburg 2013 – scientific programme

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DS: Fachverband Dünne Schichten

DS 14: Focus Session: Functionalized Semiconductor Nanowires I (jointly with HL)

DS 14.2: Invited Talk

Tuesday, March 12, 2013, 10:00–10:30, H8

Crystal structure control in nanowires — •Erik Bakkers — Eindhoven University of Technology, Den Dolech 2, 5612 AZ Eindhoven, The Netherlands — Delft University of Technology, Lorentzweg 1, 2600 CL Delft, The Netherlands

Important semiconductors like Si, Ge and GaP have an indirect bandgap when having the (normal) cubic crystal structure. It has been predicted that when these materials crystallize in a hexagonal structure that they can have a direct bandgap. But, these materials have never been controllably made with the pure wurtzite structure. Nanowires can be grown in other crystal structures than known in the bulk, offering new routes to tailor the optical and electronic properties. The nanowire growth mechanism will be discussed and the fabrication of the pure hexagonal form will be investigated. Here, we exploit these possibilities and discuss control of the crystal structure of nanowires and investigate the optical properties. Finally, we demonstrate the direct nature of the bandgap of wurtzite materials.