Regensburg 2013 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 14: Focus Session: Functionalized Semiconductor Nanowires I (jointly with HL)

DS 14.6: Topical Talk

Dienstag, 12. März 2013, 12:15–12:45, H8

3D GaN nanorods: fabrication, properties, applications — •Andreas Waag, Johannes Ledig, Xue Wang, Milena Erenburg, Jana Hartmann, Lorenzo Caccamo, Matin Mohajerani, Manal Ali Deeb, Jiandong Wei, Martin Hoffmann, Hao Shen, and Hergo-Heinrich Wehmann — TU Braunschweig

GaN nanorods and 3D columns recently attracted a lot of attention since they are expected to be an exciting new route towards light engines for solid state lighting. In contrast to a planar thin film technology, a completely 3-dimensional nano- or microrod approach gives more freedom in the device design. E.g., a core-shell design of LEDs based on 3D GaN offer a dramatically enhanced active area per wafer footprint, since the active area is scaling with height of the 3D structures. High quality core-shell devices will have a tremendous impact on LED technology. However, there are also challenges related to a 3D device approach. Conventional planar characterization as well as processing techniques can no longer be used. In addition, the growth windows in epitaxy have to be modified in order to enhance vertical growth rates and reduce planar growth rates. Quite often, this leads to growth modes, which are far away from the ones regularly used for high efficiency planar LEDs. This talk will give an overview on the state of the art of our 3D GaN research, particularly focusing on MOCVD growth and 3D characterization. Potential advantages and challenges of this exciting new strategy towards low cost high efficiency solid state lighting will also be discussed.