Regensburg 2013 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 17: Focus Session: Thin Film Photovoltaic Materials and Solar Cells I

DS 17.6: Topical Talk

Mittwoch, 13. März 2013, 12:15–12:45, H32

Nanowire device concepts for thin film photovoltaics — •Silke Christiansen — Max-Planck-Institute for the Science of Light, Erlangen, Germany — Institut of Photonic Technology, Jena, Germany

Large-area aligned SiNW arrays are fabricated on Si wafers and multi-crystalline layers on glass substrates via metal-catalyzed wet chemical etching (WCE) or dry etching processes with or without prior lithographic patterning the use of densely packed well organized polystyrene (PS) spheres as a mask. The diameter, length, packing density, and even the shape of SiNWs could precisely be controlled and tuned by adjusting either plasma etching duration or chemical etching conditions and the diameter and pitch of the PS spheres. The anti-reflective properties of SiNWs and thus the extremely high absorption in thin SiNW layers are essential for NW based next generation solar cells. Several cell concepts with SiNWs are realized including most interesting ones: a hybrid organic/inorganic solar cell using SiNWs as absorber and PEDOT:PSS as a conducting polymer, a semiconductor-insulator-semiconductor (SIS) cell concept with SiNWs as absorbers and a tunneling barrier for charge carrier separation. The thin tunneling oxide is Al2O3 with a thickness of only a few Å and a transparent conductive oxide (TCO here: Al:ZnO) are both grown conformally around the SiNWs using atomic layer deposition (ALD).The first solar cell prototypes of 1-2cm2 area on glass substrates reached (i) open-circuit voltage of 625 mV, a short-circuit current density of 20 mA/cm2 and efficiencies >7% and (ii) an open-circuit voltage of 550 mV, a short-circuit current density of 33 mA/cm2 and efficiencies >10%.