Regensburg 2013 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 18: Micro- and Nanopatterning (jointly with O)
DS 18.2: Vortrag
Mittwoch, 13. März 2013, 09:45–10:00, H8
Pattern formation on sapphire by low energy ion beam erosion — •Jan Lorbeer, Marc Teichmann, Frank Frost, and Bernd Rauschenbach — Leibniz Institut für Oberflächenmodifizierung e.V, Leipzig, Deutschland
The pattern formation on sapphire by low-energy ion beam erosion is investigated. In detail the influence of the ion incidence angle ( θ = 0 − 85 deg), ion energy ( Eion = 400 − 2000 eV), ion species (Ne, Ar, Kr, Xe) and fluence ( Φ ≈ 2 × 1018 − 1.5 × 1019 cm−2 ) were evaluated.
In general there are four regimes of surface evolution. At low incidence angles the surface is smoothened with an minimal RMS value of about 90 pm. At angles of around 50 deg a ripple pattern develops. The wavelengths can be tuned in the range from 10 to 50 nm. Following the surface becomes faceted, connectet with a maximum in the surface roughness at about 75 degrees. At even higher incidence angles the surface is smoothened again.
It has been shown, that the regualarity of the formed ripples strongly depends on the ion mass, whereby heavier ions form a more regular surface pattern.
For higher ion energies the onset of ripple formation shifts to higher incidece angles.
Support by Deutsche Forschungsgemeinschaft through Forschergruppe 845 is gratefully acknowledged.