Regensburg 2013 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 18: Micro- and Nanopatterning (jointly with O)
DS 18.6: Vortrag
Mittwoch, 13. März 2013, 10:45–11:00, H8
Fabrication and electrical transport properties of binary Co-Si nanostructures prepared by focused electron beam-induced deposition — •Fabrizio Porrati and Michael Huth — Physikalisches Institut, Goethe Universität, Frankfurt am Main
CoSi-C binary alloys have been fabricated by focused electron beam-induced deposition (FEBID) by the simultaneous use of dicobaltoctacarbonyl, Co2(CO)8, and neopentasilane, Si5 H12, as precursor gases. The alloys are made of Co-Si nanoparticles embedded in a carbonaceous matrix. By varying the relative precursors fluxes, alloys with variable Si:Co ratio are obtained. The electrical transport properties are governed by the electron tunneling between neighboring Co nanoparticles. According with the metal content of the alloy, the electrical conductivity can be tuned from the insulating regime into the quasi-metallic tunneling coupling regime.