DS 18: Micro- and Nanopatterning (jointly with O)
Wednesday, March 13, 2013, 09:30–11:30, H8
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09:30 |
DS 18.1 |
Evolution of Ge surface topography during low energy ion beam erosion — •Marc Teichmann, Jan Lorbeer, Frank Frost, and Bernd Rauschenbach
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09:45 |
DS 18.2 |
Pattern formation on sapphire by low energy ion beam erosion — •Jan Lorbeer, Marc Teichmann, Frank Frost, and Bernd Rauschenbach
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10:00 |
DS 18.3 |
Modelling the etching behavior of GaAs irradiated with protons in a proton beam writing process — •Ulrich Vetter, Tristan Koppe, Charlotte Rothfuchs, and Hans Hofsäss
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10:15 |
DS 18.4 |
Selective deposition of nanospheres in trenches on silicon surfaces by self-organisation — •Katharina Brassat and Jörg K. N. Lindner
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10:30 |
DS 18.5 |
Nickel Nanodot Arrays on Silicon formed by Nanosphere Lithography: A TEM Study — •Johannes Pauly and Jörg K. N. Lindner
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10:45 |
DS 18.6 |
Fabrication and electrical transport properties of binary Co-Si nanostructures prepared by focused electron beam-induced deposition — •Fabrizio Porrati and Michael Huth
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11:00 |
DS 18.7 |
Realizing three-dimensional nanostructures using nano-templates: concept, properties and high performance devices — •Fabian Grote, Liaoyong Wen, Zhibing Zhan, Ahmed Al-Haddad, Yan Mi, Samar Tarish, Chengliang Wang, Ranjith Vellacheri, Huaping Zhao, and Yong Lei
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11:15 |
DS 18.8 |
Characterization of high-end photomasks by spectroscopic ellipsometry — •Anett Heinrich, Ingo Dirnstorfer, Thomas Mikolajick, Jörg Bischoff, and Uwe Richter
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