Regensburg 2013 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 2: Focus Session: Ion Beam Induced Surface Patterns I
DS 2.4: Hauptvortrag
Montag, 11. März 2013, 11:15–11:45, H32
Quantitative analysis of nanoripple patterns by GISAXS 3D mapping — •David Babonneau, Elliot Vandenhecke, Mathieu Garel, Sophie Camelio, and Sophie Rousselet — Institut Pprime, CNRS, Poitiers, France
3D reciprocal space mapping in the grazing incidence small-angle x-ray scattering (GISAXS) geometry was used to obtain accurate morphological characteristics of nanoripple patterns prepared by low energy (500-1500 eV) Xe+ ion sputtering of Al2O3 and Si3N4 amorphous thin films at oblique incidence. We will show that appropriate modeling in the distorted wave-Born approximation makes it possible to determine unambiguously the average 3D shape of the ripples (width, height, length, and asymmetry) along with the degree of ordering of the pattern, which strongly depend on the experimental conditions of sputtering such as ion energy, angle of incidence, temperature, ion flux, and total fluence. In addition, we will show that the lateral order of the nanoripple patterns can be transferred to arrays of noble metal nanoparticles (Ag or Au) or magnetic nanowires (FePt) by subsequent ion-beam sputtering deposition at glancing incidence. GISAXS experiments clearly demonstrate that (i) the rippled surfaces are selectively decorated by the nanoparticles/nanowires on the facets that face the incoming atomic flux, and (ii) the growth of an additional capping layer proceeds conformal with respect to the modulation of the prepatterned buffer layer.