Regensburg 2013 – scientific programme

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DS: Fachverband Dünne Schichten

DS 20: High- and Low-k-Dielektrics (jointly with DF)

DS 20.3: Talk

Wednesday, March 13, 2013, 10:10–10:30, H11

Combinatorial Preparation of Dielectric Films — •Achim Walter Hassel and Andrei Ionut Mardare — Institute for Chemical Technologygy of Inorganic Materials, Johannes Kepler University Linz, Austria

Valve metals such as Al, Hf, Nb, Ta, Ti, Zr are well known sources for thin anodic oxide films that can be used as dielectrics. Al and Ta are used in capacitors, Hf is handled as the new gold standard for high-k dielectrics. Each of the oxides on the pure metals has its advantages and disadvantages. In an attempt to optimise these properties an new approach is presented. Binary and ternary thin film libraries of these metals are prepared as compositional spreads on glass or silicon. Using scanning characterisation techniques such XRF, XRD, EXD the parent metal properties are linked to the oxide formation data, its specific resistance and dielectric constant. All these information is extracted from a series of experiments performed using scanning droplet cell microscopy (SDCM). A comprehensive data set is generated for each of these libraries, showing how properties are depending on the composition.