Regensburg 2013 – scientific programme

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DS: Fachverband Dünne Schichten

DS 21: Focus Session: Functionalized Semiconductor Nanowires II (jointly with HL)

DS 21.4: Talk

Wednesday, March 13, 2013, 12:30–12:45, H8

Polarization dependent CdS nanowire lasing — •Robert Röder¹, Sebastian Geburt¹, Robert Buschlinger², Ulf Peschel², and Carsten Ronning¹ — ¹Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena — ²Institut für Optik, Information und Photonik, Friedrich-Alexander-Universität Erlangen-Nürnberg, Haberstraße 9a, 91058 Erlangen

The forthcoming limitations of electronic integrated circuits cause reinforced work in nanophotonics for the development of on-chip optical components. Since semiconductor nanowires offer efficient waveguiding and mark the physical size limit of a photonic laser, they are promising candidates to overcome these limitations via optical data transmission and processing. High quality CdS NWs synthesized via VLS mechanism open up the green spectral range around 2.4 eV acting as Fabry-Pérot laser resonators with a remarkable low threshold of 10 kW/cm^2 at room temperature. Since optical processing is specified by the direct emission of the device, a "head-on" setup was developed for the investigation of the light output originating out of the facet end along the nanowire axis. The slope efficiency of the optically pumped CdS nanolaser was determined with a high value of 5-10 %. The lasing emission as well as the ASE is furthermore highly dependent on the polarization of the optical pumping with polarization ratios around 0.15 for the emission. FDTD simulations reveal, that the increased pumping efficiency for along the nanowire axis polarized excitation is more likely based on the absorption profile than on the absolute absorption.