Regensburg 2013 – scientific programme

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DS: Fachverband Dünne Schichten

DS 23: Focus Session: Thin Film Photovoltaic Materials and Solar Cells II

DS 23.1: Talk

Wednesday, March 13, 2013, 14:45–15:00, H8

Oxygen vacancy doping of TiO₂ — •Simon Moser^1,2, Luca Moreschini², Jacim Jacimovic¹, Osor Barisic³, Helmuth Berger¹, Arnaud Magrez¹, Young Jun Chang^2,4, Keun Su Kim², Aaron Bostwick², Eli Rotenberg², Laszlo Forro¹, and Marco Grioni¹ — ¹Ecole Polytechnique Federale de Lausanne — ²Advanced Light Source, Lawrence Berkeley National Laboratory — ³University of Zagreb — ⁴University of Seoul

The titanium oxide TiO₂ has been object of extensive studies because of its suitability in many practical fields, ranging from photovoltaic applications, to catalysis, memristors, and others. As for many other transition metal oxides, great attention has been devoted to the impact on the electronic structure of different doping mechanisms, either extrinsic or due to the creation of oxygen vacancies. Here we report an angle-resolved photoemission (ARPES) work on TiO₂ single crystals and epitaxial films grown with the in situ pulsed-laser-deposition (PLD) system available at beamline 7.0.1 of the Advanced Light Source. We show the evolution of the electronic structure as a function of the amount of oxygen vacancies induced by the photon beam.