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Regensburg 2013 – scientific programme

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DS: Fachverband Dünne Schichten

DS 23: Focus Session: Thin Film Photovoltaic Materials and Solar Cells II

DS 23.1: Talk

Wednesday, March 13, 2013, 14:45–15:00, H8

Oxygen vacancy doping of TiO2 — •Simon Moser1,2, Luca Moreschini2, Jacim Jacimovic1, Osor Barisic3, Helmuth Berger1, Arnaud Magrez1, Young Jun Chang2,4, Keun Su Kim2, Aaron Bostwick2, Eli Rotenberg2, Laszlo Forro1, and Marco Grioni11Ecole Polytechnique Federale de Lausanne — 2Advanced Light Source, Lawrence Berkeley National Laboratory — 3University of Zagreb — 4University of Seoul

The titanium oxide TiO2 has been object of extensive studies because of its suitability in many practical fields, ranging from photovoltaic applications, to catalysis, memristors, and others. As for many other transition metal oxides, great attention has been devoted to the impact on the electronic structure of different doping mechanisms, either extrinsic or due to the creation of oxygen vacancies. Here we report an angle-resolved photoemission (ARPES) work on TiO2 single crystals and epitaxial films grown with the in situ pulsed-laser-deposition (PLD) system available at beamline 7.0.1 of the Advanced Light Source. We show the evolution of the electronic structure as a function of the amount of oxygen vacancies induced by the photon beam.

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