Regensburg 2013 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 24: Thermoelectric Materials

DS 24.7: Vortrag

Mittwoch, 13. März 2013, 16:15–16:30, H32

Growth and characterization of the low-temperature properties of MoSi₂ thin films — •Mehrdad Baghaie Yazdi, Maximilian Fries, and Lambert Alff — Technische Universität Darmstadt, Materialwissenschaft, Dünne Schichten, Darmstadt, Deutschland

MoSi₂ is considered to be one of the best high-temperature electric conductors, often used as heating element in furnaces. Its oxidation resistance at elevated temperature makes it a good candidate as a thin film electrode for various applications. However, MoSi₂ also shows intriguing low-temperature properties when grown as a thin film. Woerlee et al. [1] attributed a low-temperature anomaly to the Kondo effect. In a new set of experiments we have studied the growth properties of radio-frequency magnetron sputtered MoSi₂ on polycrystalline Al₂O₃. We have characterized the thin films by X-ray diffraction and scanning electron microscopy. Based on low-temperature electrical transport measurements we propose a novel nanocrystal network conduction model as alternative scenario.

[1] P. H. Woerlee et al., Appl. Phys. Lett. 44, 876 (1984).