Regensburg 2013 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 26: Organic Electronics and Photovoltaics (jointly with CPP, HL, O)
DS 26.9: Vortrag
Mittwoch, 13. März 2013, 18:00–18:15, H33
Photoemission Investigation of the Electronic Structure of P3HT:PCBM Bulk-Heterojunctions using a lift-off technique — •Angela Eckstein1,2, Dirk Hauschild1,2, Julia Kern3, Markus Mingebach3, Carsten Deibel3, Vladimir Dyakonov3, Achim Schöll1,2, and Friedrich Reinert1,2 — 1Experimentelle Physik VII, Universität Würzburg, 97074 Würzburg — 2Gemeinschaftslabor für Nanoanalytik, Karlsruher Institut für Technologie KIT, 76021 Karlsruhe — 3Experimentelle Physik VI, Universität Würzburg, 97074 Würzburg
Poly(3-hexylthiophene): phenyl-[6,6]-C61 butyric acid methyl ester (P3HT:PCBM) bulk heterojunctions (BHJ) are prototype active layers for organic solar cells. The electronic structure at the internal interface can be accessed by photoelectron spectroscopy (PES), thus providing insight into the alignment of the electronic levels and the occurrence of possible interface dipoles. However, the very surface sensitive PES investigation is complicated in case of P3HT:PCBM bulk heterojunctions since the film preparation by spin-coating creates a P3HT wetting layer on the film surface. In order to avoid this problem we used a lift-off technique to access the interface to the spin coating substrate (SiO2), which has shown to resemble the bulk situation [1]. P3HT:PCBM samples with different mixing ratio, which can be lift-off-prepared under UHV-condition thus avoiding contamination by ambient conditions, have been investigated by x-ray- and UV-PES as well as by inverse PES with particular respect to the influence of degradation and radiation damage. [1] Kahn et al. (Org. El. 11 (2010) 1779-1785)