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DS: Fachverband Dünne Schichten

DS 27: Thin Film Characterization: Structure Analysis and Composition (XRD, TEM, XPS, SIMS, RBS,...) I

DS 27.4: Vortrag

Mittwoch, 13. März 2013, 18:00–18:15, H32

In situ GISAXS characterization of Al sputtering on Alq3 thin film — •Shun Yu, Gonzalo Santoro, Jan Perlich, Marion Kuhlmann, Johannes F.H. Risch, Matthias Schwartzkopf, and Stephan V. Roth — HASYLAB, DESY, Notkestraße 85, 22607, Hamburg

Organic light emitting diode (OLED) is an important device as the next generation light source for illumination. Its low cost, easy fabrication and relatively high efficiency have attracted many research interests. The multilayer device structure emphasizes the significance of understanding the interfacial structure and properties. In most OLEDs, Al is used as the metal electrical contact and Tris(8-hydroxyquinolinato)aluminium (Alq3) is the activating layer. Upon sputtering on Alq3, Al can diffuse into the organic layer, modifying both the morphological and electronic structures and consequently the device performance. The interaction between Al and Alq3 has been studied by different spectroscopic techniques and theoretical methods at single molecule level. Nevertheless, the growth of the Al thin film on Alq3 is scarcely studied. In this work, we have exploited in situ grazing incident small angle X-ray scattering (GISAXS) technique to monitor the growth of Al thin film on top of Alq3 layer during the high speed sputtering process in real time. As a result, we elucidate three growing stages from the out-of-plane scattering pattern. Meanwhile, both Al and Alq3 films demonstrate good correlation to substrate roughness. The results benefit the comprehension of the general industrial sputtering process.