Regensburg 2013 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 28: Layer Properties: Electrical, Optical, and Mechanical Properties
DS 28.1: Vortrag
Donnerstag, 14. März 2013, 09:30–09:45, H8
Crystallization Kinetics of Phase-Change Materials in the High-Speed Regime — •Julia Benke1, Egidio Carria1, Martin Salinga1,2, and Matthias Wuttig1,2 — 1I. Physikalisches Institut (IA) — 2JARA-FIT, RWTH Aachen
Phase-change materials (PCM) are dominating the field of rewritable optical data storage. The pronounced optical contrast between their amorphous and crystalline phase is used to code the digital information in rewritable CDs, DVDs and Blue-Ray discs. Nevertheless these devices do not tap the full potential of PCM. The fast transition between the two phases can compete with writing speed in DDR-RAM and, atdditionally, this technology provides the great advantage of non-volatility.
In recent years, many efforts have been spent to unravel the origin of the ultra-fast phase transition. Especially, the limiting process of crystallization has attracted much interest. PCMs can be divided into two classes, nucleation-dominated materials like Ge2Sb2Te5 and growth-dominated materials such as Ag-In-doped Sb2Te. The interplay of nucleation and growth during the crystallization process is of great interest for the reliability of down-scaled PC-memory cells. With our new Phase-change Optical Tester, we have investigated the crystallization kinetics of GeTe and Ag-In-doped Sb2Te under isothermal conditions over a large temperature range up into the high-speed regime. Starting from these measurements, we have inferred several properties of the melt-quenched amorphous phase building a general correlation with the switching mechanism in PCMs.