Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 28: Layer Properties: Electrical, Optical, and Mechanical Properties
DS 28.7: Vortrag
Donnerstag, 14. März 2013, 11:00–11:15, H8
Systematic investigations of low energy ion beam sputtering of Si and Ag — •René Feder, Frank Frost, Horst Neumann, Carsten Bundesmann, and Bernd Rauschenbach — Leibniz-Institut für Oberflächenmodifizierung e.V,, Permoserstr. 15, 04318 Leipzig, Germany
Ion beam sputter deposition (IBD) provides intrinsic features which influence the properties of the growing film, because ion properties and geometrical process conditions generate different energy and spatial distribution of the sputtered and scattered particles.
A vacuum deposition chamber has been set up which allows ion beam sputtering of different targets under variation of geometrical parameters and of ion beam parameters to make a systematic analysis of the correlation between the properties of the ion beam, the properties of the sputtered and scattered particles, and the properties of the deposited films. A set of samples was prepared and characterized with respect to selected film properties, such as thickness and surface topography. The experiments indicate a systematic influence of the deposition parameters on the film properties. Because of this influence, the energy distribution of secondary particles was measured using an energy-selective mass spectrometer. Among others, experiments revealed a high-energetic maximum for backscattered primary ions, which shifts with increasing emission angle to higher energies. Experimental data are compared with Monte Carlo simulations done with the well-known TRIM.SP code.
Financial support by DFG within project BU2625/1-1.