Regensburg 2013 – scientific programme

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DS: Fachverband Dünne Schichten

DS 30: Thin Film Characterization: Structure Analysis and Composition (XRD, TEM, XPS, SIMS, RBS,...) II

DS 30.1: Talk

Thursday, March 14, 2013, 14:45–15:00, H32

CVD and ALD deposited hafnia: an XPS study — •Simone Brizzi, Massimo Tallarida, and Dieter Schmeisser — BTU Cottbus , Konrad-wachsmann allee 17 03046 Cottbus

In this work we report on Hafnium oxide deposited on silicon by means of chemical vapour deposition (CVD) and atomic layer deposition (ALD) using tetrakis-di-methyl-amino-Hf (TDMAHf) and water as precursors. We have studied the behavior of ALD and CVD at intermediate temperatures: ALD was performed outside the ALD window (T>300°C), whereas CVD was performed at low temperatures, approaching the ALD window (T<400°C). In this way we wanted to elucidate about the possibility of taking advantage of the conformality of ALD films and the high growth rate of CVD at the same time. Comparable sets of samples prepared with the two methods were measured by X-ray photoelectron spectroscopy and atomic force microscopy in order to determine differences between them: growth rate, Hf/O ratio, valence band positions and roughness are discussed and compared as a function of deposition temperature and process parameters.