Regensburg 2013 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 30: Thin Film Characterization: Structure Analysis and Composition (XRD, TEM, XPS, SIMS, RBS,...) II

DS 30.2: Vortrag

Donnerstag, 14. März 2013, 15:00–15:15, H32

Formation of ultrathin silica/iron-oxide epitaxial layers on Ru(0001) — •xin yu, anibal boscoboinik, bing yang, shamil Shaikhutdinov, and Hajo Freund — Fritz-Haber-Institut der Max-Planck-Gesellschaft,Berlin, Germany

Silica is one of the most abundant materials on our planet and is the key material in many modern technological applications. Thin silica films grown on metal substrates are well-suited model systems for studying structure-property relationships of silica related materials.[1] In particular, silica bilayer film weakly bound to a metal substrate can be grown on Ru(0001). This system has recently been used as a template for the preparation of aluminosilicate films.[2] In continuation of these works, here we studied preparation of Fe-doped silicate films. The experiments were carried out in an UHV chamber (base pressure < 3x10-10 mbar) equipped with LEED, AES, UPS, XPS, IRAS and STM. The film preparation includes sequential vapor deposition of Si and Fe onto an O precovered Ru(0001) substrate at ~100 K followed by high-temperature annealing (ca. 1100 K) in ~10-6 mbar of oxygen. The atomic structure of the resulted films was studied as a function of the Fe/Si ratio. The experimental results, substantiated by DFT calculation (performed by Sauer*s group in HU Berlin), revealed the formation of the epitaxial film consisting of a single layer of silica on top of a single layer of FeOx on Ru(0001). We believe that the prepared hetero-layered films may be interesting objects in nanotechnology. [1] S. Shaikhutdinov, H.-J. Freund, Adv. Mater., 2012. [2] J. A. Boscoboinik, et al., Angew. Chem. Int. Ed., 51 (2012) 6005