Regensburg 2013 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DS: Fachverband Dünne Schichten

DS 32: Poster Session IV: Atomic layer deposition; Organic thin films; Organic Electronics and Phototovoltaics; Organic Materials for Spintronics - from spinterface to devices; Thin film photovoltaic materials and solar cells

DS 32.1: Poster

Donnerstag, 14. März 2013, 17:00–20:00, Poster B2

Regimes of leakage current in ALD-processed Al2O3 thin film layers — Holger Spahr, Johannes Reinker, Tim Bülow, Diana Nanova, Hans-Hermann Johannes, and •Wolfgang Kowalsky — Technische Universität Braunschweig, Institut für Hochfrequenztechnik, Schleinitzstraße 22, 38106 Braunschweig

A recently known phenomenon at thin oxide layers with thicknesses below 40 nm is the increase of their breakdown electric field, called disruptive strength, when decreasing the layer thicknesses below 10 nm. This offers the possibility to examine the current - electric field characteristics to higher electric field strengths without an early electric breakdown.

In this contribution, we report on the identification of the current regime of trap free square law and the buildup of an S shaped current - electric field characteristic curve. This observation for ALD processed Al2O3 layers has not been mentioned in literature before. Additionally a modern model of space charge limited current (SCLC) was used to fit the S shaped characteristic and extract the associated parameters, such as mobility, density of states and the energy band gap between conduction band and trap state. In this context, it can be assumed, that the Poole-Frenkel effect does not play a significant role for the current increase after the trap filled limit (TFL).