Regensburg 2013 – scientific programme

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DS: Fachverband Dünne Schichten

DS 32: Poster Session IV: Atomic layer deposition; Organic thin films; Organic Electronics and Phototovoltaics; Organic Materials for Spintronics - from spinterface to devices; Thin film photovoltaic materials and solar cells

DS 32.11: Poster

Thursday, March 14, 2013, 17:00–20:00, Poster B2

Initial steps of rubicene film growth on silicon dioxide — •Boris Scherwitzl, Walter Lukesch, Günther Leising, Roland Resel, and Adolf Winkler — Institute of Solid State Physics, Graz University of Technology, Petersgasse 16, A-8010 Graz, Austria

Studies of the initial stages of organic film growth are of great relevance for the use of organics in microelectronic devices, which became of increasing importance in a variety of applications. This contribution describes the behavior of rubicene film growth on silicon dioxide with respect to sample treatments under UHV conditions. Physical vapor deposition from a Knudsen cell was used to create films with varying thickness, from sub-monolayer up to multilayer range. The exact amount of evaporated material was determined by a quartz microbalance. A number of different analytical methods were used to examine sample and surface properties, namely Auger Electron Spectroscopy (AES) for chemical analysis, Thermal Desorption Spectroscopy (TDS) to determine desorption behavior and Atomic Force Microscopy (AFM) for a subsequent ex-situ analysis of the sample surface. It could be shown that rubicene initially forms two layers of flat-lying molecules, which will stand up and form islands at and above a certain coverage. Different desorption energies suggest that the binding of the organic molecules to the substrate material is not as strong as among the molecules themselves. Substrate conditions such as purity and roughness had no observable influence. AFM studies confirmed the dewetting of the initial layers under atmospheric conditions and showed desorption and diffusion processes happening at room temperature.