Regensburg 2013 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
DS: Fachverband Dünne Schichten
DS 32: Poster Session IV: Atomic layer deposition; Organic thin films; Organic Electronics and Phototovoltaics; Organic Materials for Spintronics - from spinterface to devices; Thin film photovoltaic materials and solar cells
DS 32.45: Poster
Thursday, March 14, 2013, 17:00–20:00, Poster B2
Determined Molecular Orientation of Terbium Diphthalocyanine Thin Films by Ellipsometry and Magneto-optical Kerr Effect Spectroscopy — •P. Robaschik1, M. Fronk1, S. Klyatskaya2, M. Ruben2,3, D.R.T. Zahn1, and G. Salvan1 — 1TU Chemnitz, 09126 Chemnitz, Germany — 2KIT, 76344 Eggenstein-Leopoldshafen, Germany — 3ICPMS, 67034 Strasbourg, France
The detection and control of the molecular growth mode is a key prerequisite for fabricating opto-electronic and future spintronic devices. Thin films of the single molecule magnet (SMM) terbium diphthalocyanine, which are successfully deposited by organic molecular beam deposition on silicon substrates covered with native oxide, are investigated by means of variable angle spectroscopic ellipsometry (VASE) and magneto-optical Kerr effect (MOKE) spectroscopy at room temperature. The molecular orientation was determined from the degree of uniaxial anisotropy of the optical constants. A numerical analysis of the energy dispersion of the real and imaginary part of the complex magneto-optical Kerr rotation angle in the 1.7 eV to 5.0 eV spectral range allows the magneto-optical material constant, the so-called Voigt constant, to be determined. The amplitude of the Voigt constant provides a more sensitive measure for the molecular orientation in thin films than spectroscopic ellipsometry. While VASE and MOKE are able to yield quantitative results for the molecular angle, MOKE can even resolve slight relative differences. The organic molecules in a thin film below 10 nm were found to have molecular planes close to parallel to the silicon substrate and the tilt angle increases in thicker films.