Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DS: Fachverband Dünne Schichten

DS 32: Poster Session IV: Atomic layer deposition; Organic thin films; Organic Electronics and Phototovoltaics; Organic Materials for Spintronics - from spinterface to devices; Thin film photovoltaic materials and solar cells

DS 32.46: Poster

Donnerstag, 14. März 2013, 17:00–20:00, Poster B2

Electro-optical charaterization of CIGS solar cells with varied absorber compositions — •Alexander Kusch, Michael Oertel, David Stoll, Udo Reislöhner, and Carsten Ronning — Institut für Festkörperphysik, Physikalisch-Astronomische Fakultät, Friedrich-Schiller-Universität Jena, Helmholtzweg 3, 07743 Jena, Germany

The results of the electro-optical characterization of sequentially processed Cu(In, Ga)Se2 solar cells are presented. The first step of the sequential absorber layer forming process is the deposition of a multi-layer system containing copper, indium and gallium on top of a molybdenum back contact. Both the multi-layer system and the back contact are deposited by DC-magnetron sputtering. In the second step this metallic precursor is reactively annealed in two steps in a selenium vapour atmosphere where it is converted to an about 2 µm thick CIGSe absorber layer. Electro-optical measurements of solar cells with such prepared absorber layers show strong variations in the resulting characteristics for different precursor compositions. The efficiency of gallium free cells can vary by up to 20% as a function of the [Cu]:[In] ratios in the range of 0.75<[Cu]:[In]<0.95. The distribution and share of gallium within the absorber was varied and the impact on solar cell performance was investigated.