Regensburg 2013 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

DS: Fachverband Dünne Schichten

DS 32: Poster Session IV: Atomic layer deposition; Organic thin films; Organic Electronics and Phototovoltaics; Organic Materials for Spintronics - from spinterface to devices; Thin film photovoltaic materials and solar cells

DS 32.48: Poster

Thursday, March 14, 2013, 17:00–20:00, Poster B2

Investigation of physical properties of doped ZnTe thin films for solar cell applications — •Waqar Mahmood — Thin Films Technology Research Laboratory, COMSATS Institute of Information Technology

Zinc telluride thin films were deposited on to glass substrate using close spaced sublimation technique. The thickness of these films was optimized by deposition time. Cu & Ag doped thin films of same thickness were considered for comparative study. XRD pattern showed polycrystalline ZnTe thin films with preferred orientation (111) having cubic phase. ZnTe thin films were immersed in Ag (NO3)2 and Cu (NO3)2 solution for different times varying from 05 min to 20 min respectively. The temperature of dopant solutions were kept at 600C * 50C throughout the doping process. Post annealing of doped ZnTe thin films was done at 3500C for 1 hour under vacuum of 10-4 mbar. In XRD spectra, the crystallite size was increased after silver and copper immersion. SEM with EDX indicated the change in grain size of as-deposited and doped samples with compositional analysis of Cu and Ag in ZnTe thin films. Optical study showed the change of energy band gap in doped samples with as deposited ZnTe also %T decreases after immersion. Resistivity of as deposited ZnTe thin films was about 106 Ω-cm. which was reduced upto 68.97 Ω-cm after Cu immersion. The resistivity was reduced up to 104 Ω-cm after Ag immersion. Raman spectra showed TO and LO modes also it was used to check the crystallinity of un-doped and doped ZnTe samples.