Regensburg 2013 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 32: Poster Session IV: Atomic layer deposition; Organic thin films; Organic Electronics and Phototovoltaics; Organic Materials for Spintronics - from spinterface to devices; Thin film photovoltaic materials and solar cells
DS 32.53: Poster
Donnerstag, 14. März 2013, 17:00–20:00, Poster B2
Modulated charge separation across disordered TiO2 / In2S3 hetero-junctions — •Albert Juma, Anahita Azarpira, Christian-Herbert Fischer, and Thomas Dittrich — Helmholtz-Centre-Berlin for Materials and Energy, Hahn-Meitner-Platz 1, 14109 Berlin, Germany.
Charge separation across hetero-junctions between disordered wide gap semiconductors and suitable inorganic absorbers play a decisive role for the development not only of nanocomposite solar cells. Extremely thin coatings of Cl-free and Cl-containing In2S3 (In2S3:Cl) layers were prepared by spray ion layer gas reaction (ILGAR) on nanoporous TiO2 (np-TiO2). Charge separation in FTO/np-TiO2/In2S3:Cl, FTO/In2S3:Cl, FTO/np-TiO2 / In2S3 and FTO/In2S3 systems has been investigated by modulated surface photovoltage spectroscopy (SPV). The exponential defect tails below the band gap of In2S3 were reduced for In2S3:Cl. The analysis of the SPV spectra allowed to distinguish different mechanisms of charge separation and to deduce the conduction band offsets (about 0.3 eV and 0.05 eV for np-TiO2/In2S3:Cl and np-TiO2/In2S3, respectively).