Regensburg 2013 – scientific programme
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DS: Fachverband Dünne Schichten
DS 32: Poster Session IV: Atomic layer deposition; Organic thin films; Organic Electronics and Phototovoltaics; Organic Materials for Spintronics - from spinterface to devices; Thin film photovoltaic materials and solar cells
DS 32.55: Poster
Thursday, March 14, 2013, 17:00–20:00, Poster B2
Laser processing for CIGS thin-film solar cells — •Xi Wang1,2, Dorena Fleischer2, Pierre Lorenz2, Martin Ehrhardt2, Xiaowu Ni1, and Klaus Zimmer2 — 1Nanjing University of Science & Technology, Xiaolingwei 200, 210094 Nanjing, China — 2Leibniz-Institut für Oberflächenmodifizierung e. V., Permoserstraße 15, 04318 Leipzig, Germany
The Cu(InGa)Se2 (CIGS) thin-film solar cell attracts increasing attention because of its low cost, flexible character and high efficiency. Laser is an effective tool in performing the monolithic integrated interconnection and external integrated interconnection for the module fabrication. CIGS thin-film solar cells were scribed with picosecond laser with a pulse length of 10 ps and a wavelength of 1064 nm. The material modification and the electrical properties were influenced by the laser parameters such as fluence, frequency, and scanning speed. In the present study, the interaction mechanisms of CIGS thin-film solar cell material with picosecond laser beam were investigated. The laser-induced material removal and the material morphology of the laser-scribed areas were analyzed by scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDX). The electrical current voltage (I-V) curves with the open circuit voltage and parallel resistance were measured with an in situ measurement. Goal of the examination was the improvement of the generation of scribes in the CIGS material under attention to electrical properties in combination with surface characteristics for optimal preparation of further steps of production.