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DS: Fachverband Dünne Schichten
DS 32: Poster Session IV: Atomic layer deposition; Organic thin films; Organic Electronics and Phototovoltaics; Organic Materials for Spintronics - from spinterface to devices; Thin film photovoltaic materials and solar cells
DS 32.58: Poster
Thursday, March 14, 2013, 17:00–20:00, Poster B2
Electrical and structural characterization of CdTe thin film solar cells with In2S3 buffer layer — •Felix Lind1, Johanna Krammer2, Christoph Heisler1, Christian Kraft1, Christian-Herbert Fischer2, and Werner Wesch1 — 1Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Helmholtzweg 3, 07743 Jena — 2Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin
As an alternative to the commonly used toxic CdS, in this work In2S3 is used as n-type buffer layer in CdTe thin film solar cells. In contrast to CdS, In2S3 can be deposited in a non-vacuum process at low temperatures without producing toxic waste. The In2S3 buffer layers with varied chlorine concentrations and thicknesses were fabricated with the "ion layer gas reaction" (ILGAR) process. Subsequently the CdTe layers were deposited by the physical vapour deposition (PVD) method. The electrical properties of the complete solar cells were investigated by means of current-voltage measurements (I-V) and external quantum efficiency (EQE). The results show that the conversion efficiencies and quantum efficiencies are significantly lower for the CdTe thin film solar cells with In2S3 buffer layer compared to solar cells with CdS buffer layer. Scanning transmission electron microscopy (STEM) was used to investigate the structural properties. It was found that the post deposition CdCl2-treatment leads to a non-uniform and lower thickness of the In2S3 layer. Altogether CdTe solar cells with In2S3 buffer layer are producible in principle at the used process parameters, but show no improvement compared to CdS buffer layer.