Regensburg 2013 – scientific programme
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DS: Fachverband Dünne Schichten
DS 34: Resistive Switching (jointly with DF, KR, HL)
DS 34.3: Talk
Friday, March 15, 2013, 10:00–10:15, H32
Cation defect engineering in SrTiO3 thin films by PLD with Verification and implication on memristive properties — Sebastian Wicklein1, •Chencheng Xu1, Alessia Sambri2, Salvatore Amoruso2, David Keeble3, Annemarie Köhl1, Werner Egger4, and Regina Dittmann1 — 1Peter Grünberg Institut 7, Forschungszentrum Jülich GmbH, Germany — 2Università degli Studi di Napoli Federico II, Dipartimento di Scienze Fisiche & CNR-SPIN, I-80126 Napoli, Italy — 3University of Dundee, School of Engineering, Physics and Mathematics, Dundee DD1 4HN, Scotland — 4University Bundeswehr, D-85577 Munich, Germany
The origin of the c-axis expansion in homoepitaxial STO thin films is investigated by positron annihilation lifetime spectroscopy (PALS): Low laser fluence results in Ti vacancy rich sample while high laser fluence for the Sr vacancy rich sample.
XPS measurement on the ablated spot on the targets shows that increased laser fluence ablates more Ti. The ToF (Time of Flight) data from OES (optical emission spectrometry) indicate a preferred scattering of Ti because of background gas. The two effects together lead to tunable stoichiometry of the film.
In the MIM (metal insulator metal) structure Sr-rich films exhibit the most stable switching behavior and highest on/off ratio, while in the LC AFM (local conducting atomic force microscopy) switching the on/off ratio of Ti is the higest.