Regensburg 2013 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 35: Application of Thin Films
DS 35.5: Vortrag
Freitag, 15. März 2013, 10:30–10:45, H8
Effect of composition and strain on conductivity of LaNiO3 thin films — Mingwei Zhu1,2, •Philipp Komissinskiy1, Aldin Radetinac1, Mehran Vafaee1, and Lambert Alff1 — 1Department of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt, Germany — 2Shenyang National laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, People’s Republic of China
Highly conductive oxide LaNiO3 (LNO) is an excellent electrode material for all-oxide electronic devices. We have grown 35-50 nm thick La1+xNi1−xO3 thin films by pulsed laser deposition. Fine tuning of the Ni/La ratio in the films is achieved by using targets with various cation stoichiometry x = 0.04, 0.01, -0.09 as measured by energy dispersive spectrometry. We observe that the conductivity of the LNO films can be controlled by tailoring the Ni/La ratio. The LNO films deposited using a target with slight excess of Ni show record low resistivity values of about 80 µ Ω · cm at room temperature. The excess Ni oxidizes to NiO as evident from X-ray diffraction measurements. The effect of compressive and tensile strain on conductivity was studied using LNO films grown on SrTiO3, LaAlO3, LaSrAlO4, and (La,Sr)(Al,Ta)O3 substrates. This work was supported by the National Natural Science Foundation of China (No.51202256) and China Scholarship Council (CSC)