DS 4: Atomic Layer Deposition
Montag, 11. März 2013, 12:15–13:00, H8
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12:15 |
DS 4.1 |
Realization of platinum 3D nanostructures using an improved atomic layer deposition process — •Yan Mi, Liaoyong Wen, ChengLiang Wang, Huaping Zhao, and Yong Lei
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12:30 |
DS 4.2 |
Atomic layer deposition of Ga2O3 using Tri-methyl-Gallium and H2O — •Sakeb Hasan Choudhury, Massimo Tallarida, Chittaranjan Das, and Dieter Schmeisser
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12:45 |
DS 4.3 |
An efficient Si photo cathode for a wide range of electrolyte pH values — •Chittaranjan Das, Massimo Tallarida, Katarzyna Skorupska, Hans-Joachim Lewerenz, and Dieter Schmeisser
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