Regensburg 2013 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 6: Focus Session: Ion Beam Induced Surface Patterns II

DS 6.2: Vortrag

Montag, 11. März 2013, 15:00–15:15, H8

Ion beam induced surface patterns due to mass redistribution and curvature dependent sputtering — •Omar Bobes, Kun Zhang, and Hans Hofsäss — II. Physikalisches Institut, Universität Göttingen, Germany

We investigate the pattern formation on amorphous carbon films irradiated with 200 eV to 10 keV Xe ions. Sputter yield and number of displacements within the collision cascade vary strongly as function of ion energy and allow to investigate the contributions of curvature dependent erosion according to the Bradley-Harper model [1] and mass redistribution according to the Carter-Vishnyakov model [2]. We find parallel ripple orientations for 60^∘ ion incidence angle and all energies. A transition to perpendicular patterns or a flat surface occurs around 80^∘. Our results are compared with calculations based on both models with parameters determined from simulations with program SDTrimSP [3]. The curvature coefficients S_x and S_y show that mass redistribution is dominant for parallel pattern formation. The angle where the parallel pattern orientation disappear is related to curvature dependent sputtering.
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W. Eckstein, R. Dohmen, A. Mutzke, R. Schneider, MPI for Plasma Physics, IPP Report 12/3 (2007).